MMDT3946LP4 complementary npn / pnp surface mount transistors features ? complementary pair: one 3904 (npn) and one 3906 (pnp) ? epitaxial planar die construction ? ideally suited for automated assembly processes ? lead free by design/rohs compliant (note 1) ? ?green? device (note 2) mechanical data ? case: dfn1310h4-6 ? case material: molded plastic. ?green molding? compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? nipdau over copper leadframe (lead free plating) solderable per mil-std-202, method 208 ? marking & type code information: see page 4 ? ordering information: see page 4 bottom view side view g h b k e c d r 0 . 1 5 0 top view a l l n m n d z z * dimensions d, k, l, n repeat 4x ** dimensions e, m, z repeat 2x dfn1310h4-6 dim min max typ a 1.25 1.38 1.30 b 0.95 1.08 1.00 c 0.20 0.30 0.25 d* - - 0.10 e** - - 0.20 g - 0.40 - h 0 0.05 0.02 k* 0.10 0.20 0.15 l* 0.30 0.50 0.40 m** - - 0.35 n* - - 0.25 z** - - 0.05 all dimensions in mm new product c 2 b 2 b 1 e 1 e 2 c 1 internal schematic (top view) e 1 , b 1 , c 1 = pnp3906 section e 2 , b 2 , c 2 = npn3904 section maximum ratings, npn 3904 section @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current ? continuous i c 200 ma power dissipation (notes 3, 4) p d 200 mw thermal resistance, junction to ambient (note 3) r ja 625 c/w maximum ratings, pn p 3906 section @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 1) i c -200 ma power dissipation (notes 3, 4) p d 200 mw thermal resistance, junction to ambient (note 3) r ja 625 c/w notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. device mounted on fr-4 pcb. 4. maximum combined dissipation. ds30822 rev. 4 - 2 1 of 5 www.diodes.com mmdt3946lp ? diodes incorporated
ds30822 rev. 4 - 2 2 of 5 www.diodes.com mmdt3946lp ? diodes incorporated new product electrical characteristi cs, npn 3904 section @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 5) collector-base breakdown voltage v (br)cbo 60 ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 ? v i e = 10 a, i c = 0 collector cutoff current i cex ? 50 na v ce = 30v, v eb(off) = 3.0v base cutoff current i bl ? 50 na v ce = 30v, v eb(off) = 3.0v on characteristics (note 5) dc current gain h fe 40 70 100 60 30 ? ? 300 ? ? ? i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) ? 0.20 0.30 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 0.65 ? 0.85 0.95 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 current gain-bandwidth product f t 300 ? mhz v ce = 20v, i c = 20ma, f = 100mhz switching characteristics delay time t d ? 35 ns rise time t r ? 35 ns v cc = 3.0v, i c = 10ma, v be(off) = -0.5v, i b1 = 1.0ma storage time t s ? 200 ns fall time t f ? 50 ns v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma electrical characteristi cs, pnp 3906 section @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 5) collector-base breakdown voltage v (br)cbo -40 ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 ? v i e = -10 a, i c = 0 collector cutoff current i cex ? -50 na v ce = -30v, v eb(off) = -3.0v base cutoff current i bl ? -50 na v ce = -30v, v eb(off) = -3.0v on characteristics (note 5) dc current gain h fe 60 80 100 60 30 ? ? 300 ? ? ? i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -50ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) ? -0.25 -0.40 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -0.65 ? -0.85 -0.95 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo ? 4.5 pf v cb = -5.0v, f = 1.0mhz, i e = 0 current gain-bandwidth product f t 250 ? mhz v ce = -20v, i c = -10ma, f = 100mhz switching characteristics delay time t d ? 35 ns rise time t r ? 35 ns v cc = -3.0v, i c = -10ma, v be(off) = 0.5v, i b1 = -1.0ma storage time t s ? 225 ns fall time t f ? 75 ns v cc = -3.0v, i c = -10ma, i b1 = i b2 = -1.0ma notes: 5. short duration test pulse used to minimize self-heating effect.
0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs ambient temperature (total device) (note 3) a 150 200 250 0 fig. 2, typical output capacitance characteristics (npn-3904) f = 1mhz 1 10 1,000 100 0.1 1 10 1,000 100 h, d c c u r r e n t g ai n fe i , collector current (ma) fig. 3, typical dc current gain vs collector current (npn-3904) c t = -25c a t = +25c a t = 125c a v = 1.0v ce 0.01 0.1 1 0.1 1 10 100 1,000 v, c o lle c t o r -emi t t e r (v) saturation voltage ce(sat) i , collector current (ma) fig. 4, typical collector-emitter saturation voltage vs. collector current (npn-3904) c i i c b = 10 0.1 1 10 0.1 1 10 100 1,000 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) i , collector current (ma) fig. 5, typical base-emitter saturation voltage vs. collector current (npn-3904) c i i c b = 10 fig. 6, typical output capacitance characteristics (pnp-3906) f = 1mhz new product ds30822 rev. 4 - 2 3 of 5 www.diodes.com mmdt3946lp ? diodes incorporated
1 10 1,000 100 0.1 1 10 1,000 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 7, typical dc current gain vs collector current (pnp-3906) c t = -25c a t = +25c a t = 125c a v = 1.0v ce 0.01 0.1 10 1 1 10 100 1,000 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 8, typical collector-emitter saturation voltage vs. collector current (pnp-3906) c i i c b = 10 v , base-emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 9, typical base-emitter saturation voltage vs. collector current (pnp-3906) c i i c b = 10 new product ordering information (note 6) device packaging shipping MMDT3946LP4-7 dfn1310h4-6 3000/tape & reel notes: 6. for packaging details, go to our websit e at http://www.diodes.c om/datasheets/ap02007.pdf. marking information 46 46= product type marking code ds30822 rev. 4 - 2 4 of 5 www.diodes.com mmdt3946lp ? diodes incorporated
ds30822 rev. 4 - 2 5 of 5 www.diodes.com mmdt3946lp ? diodes incorporated new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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